WI62195T

GaN Power Transistor by Wise-integration (4 more products)

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The WI62195T from Wise-integration is a Half-Bridge GaN-on-silicon Power IC. This transistor has a drain-source voltage of up to 650 V, a gate threshold voltage of less than 1.8 V, and a drain-source on-resistance of 195 milli-ohms. It has a continuous drain current of 9 A. This normally-off transistor achieves high current, high voltage breakdown, and high switching frequency. It has a bottom-side cooled configuration and supports easy gate drive requirements (0 V to 6 V). This power GaN IC provides zero reverse recovery loss and can tolerate switching frequencies above 1 MHz. This GaN IC is available in a surface-mount package that measures 6 x 8 mm and is ideal for high-efficiency power conversion, high-density AC-DC, DC-DC, DC-AC power conversion, bridgeless totem-pole PFC, ACF (active clamp flyback), LLC resonant converter, half-bridge topologies, synchronous buck or boost, small-medium UPS, and fast battery charging applications.

Product Specifications

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Product Details

  • Part Number
    WI62195T
  • Manufacturer
    Wise-integration
  • Description
    650 V Half-Bridge GaN-on-silicon Power IC

General

  • Configuration
    Half Bridge
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    0.9 to 1.8 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    195 to 380 milli-ohm
  • Continous Drain Current
    9 A
  • Total Charge
    1.9 nC
  • Input Capacitance
    53.5 pF
  • Output Capacitance
    13.3 pF
  • Temperature operating range
    -40 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PDFN
  • Applications
    High efficiency power conversion, High density power conversion, AC-DC, DC-DC, DC-AC, Bridgeless Totem Pole PFC, ACF (active clamp flyback), LLC resonant converter, Half-bridge topologies, Synchronous Buck or Boost, Small-Medium UPS, Fast Battery Charging
  • Dimensions
    6 x 8 mm

Technical Documents

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