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  6. PGH8FN65R160A

PGH8FN65R160A

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The PGH8FN65R160A from Xindao Electronic Technology is a GaN Power Transistor with Gate Threshold Voltage 1.8 to 3.5 V, Drain Source Voltage 650 V, Drain Source Resistance 160 to 330 milli-ohm, Continous Drain Current 13 A, Pulsed Drain Current 17 A. Tags: Surface Mount. More details for PGH8FN65R160A can be seen below.

Product Specifications

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Product Details

  • Part Number
    PGH8FN65R160A
  • Manufacturer
    Xindao Electronic Technology
  • Description
    650 V, 160 to 330 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    1.8 to 3.5 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    160 to 330 milli-ohm
  • Continous Drain Current
    13 A
  • Pulsed Drain Current
    17 A
  • Total Charge
    2.2 nC
  • Input Capacitance
    66 pF
  • Output Capacitance
    26 pF
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN8L
  • Applications
    Fast charger, Renewable energy, Telecom and data-com, Servo motors
  • Dimensions
    8 x 8 mm

Technical Documents
View details on the manufacturer's website
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