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AOB30B65LN2V

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The AOB30B65LN2V from Alpha & Omega Semiconductor is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.86 to 2.58 V, DC Collector Current 30 to 60 A, Peak Collector Current 90 A, DC Forward Current 10 to 20 A. More details for AOB30B65LN2V can be seen below.

Product Specifications

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Product Details

  • Part Number
    AOB30B65LN2V
  • Manufacturer
    Alpha & Omega Semiconductor
  • Description
    650 V, Single Switch IGBT

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.86 to 2.58 V
  • DC Collector Current
    30 to 60 A
  • Peak Collector Current
    90 A
  • DC Forward Current
    10 to 20 A
  • Junction Temperature
    -55 to 175 Degree C
  • Gate Emitter Leakage Current
    -0.1 to 0.1 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    114 to 227 W
  • Package
    TO-263 D2PAK
  • Package Type
    Surface Mount
  • Industry
    Industrial, Commercial
  • Applications
    Discharge switch, Relay replacement, PTC heater
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes

Technical Documents
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