AOGF60B65H2AL

Note : Your request will be directed to Alpha & Omega Semiconductor.

The AOGF60B65H2AL from Alpha & Omega Semiconductor is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.95 to 2.58 V, DC Collector Current 60 to 120 A, Peak Collector Current 180 A, DC Forward Current 30 to 60 A. More details for AOGF60B65H2AL can be seen below.

Product Specifications

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Product Details

  • Part Number
    AOGF60B65H2AL
  • Manufacturer
    Alpha & Omega Semiconductor
  • Description
    650 V, Single Switch IGBT

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.95 to 2.58 V
  • DC Collector Current
    60 to 120 A
  • Peak Collector Current
    180 A
  • DC Forward Current
    30 to 60 A
  • Junction Temperature
    -55 to 150 Degree C
  • Gate Emitter Leakage Current
    -0.1 to 0.1 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    29 to 74 W
  • Package
    TO3PF
  • Package Type
    Through Hole
  • Industry
    Industrial, Commercial
  • Applications
    Power factor correction, Very high switching frequency applications

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