BIDW40N65H5

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The BIDW40N65H5 from Bourns is a Field Stop Trench Gate IGBT that is ideal for switched-mode power supplies (SMPS), uninterruptible power sources (UPS), power factor correction (PFC), inverters, welding converters, and photovoltaic applications. It has a collector-emitter voltage of less than 650 V, a saturated collector-emitter voltage of 1.65 V, and a gate-emitter threshold voltage of 4.5 V. This IGBT has a DC collector current of up to 80 A and a gate-emitter leakage current of less than 400 nA. It utilizes novel Trench-Gate Field-Stop technology that provides greater control of dynamic characteristics, resulting in a lower collector emitter saturation voltage with minimal switching losses. It is an optimal choice for high performance conduction, even for high-speed switching applications. This RoHS-compliant IGBT is available in a through-hole package that measures 15.5 x 40.52 mm.

Product Specifications

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Product Details

  • Part Number
    BIDW40N65H5
  • Manufacturer
    Bourns
  • Description
    650 V Field Stop Trench Gate IGBT for SMPS Applications

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Dimensions
    15.5 x 40.52 mm
  • Saturated Collector Emitter Voltage
    1.65 V
  • DC Collector Current
    80 A
  • Peak Collector Current
    120 A
  • Gate Emitter Leakage Current
    400 nA
  • Operating Temperature
    -55 to 150 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    300 W
  • Package Type
    Through Hole
  • Applications
    Switched-Mode Power Supplies (SMPS), Uninterruptible Power Sources (UPS), Power Factor Correction (PFC), Inverters, Welding Converters, and Photovoltaic applications
  • RoHS Compliant
    Yes

Technical Documents