7MBR100XNA120-50

IGBT by Fuji Electric

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The 7MBR100XNA120-50 from Fuji Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.45 to 2.2 V, DC Collector Current 100 to 200 A, DC Forward Current 100 to 200 A, Gate Emitter Leakage Current 0.1 uA. More details for 7MBR100XNA120-50 can be seen below.

Product Specifications

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Product Details

  • Part Number
    7MBR100XNA120-50
  • Manufacturer
    Fuji Electric
  • Description
    1200 V, IGBT Module

General

  • No. of Transistors
    Seven
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.45 to 2.2 V
  • DC Collector Current
    100 to 200 A
  • DC Forward Current
    100 to 200 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    445 W
  • Applications
    Inverter for Moter drive, AC and DC servo drive amplifier, Uniterruptible power supply

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