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AIKQ120N75CP2 Image

The AIKQ120N75CP2 from Infineon Technologies is an Automotive Qualified IGBT that consists of three fast soft recovery emitter-controlled diodes. It has a collector-emitter voltage of less than 750 V, a saturated collector-emitter voltage of 1.3 V, and a gate-emitter threshold voltage of 5.8 V. This IGBT has a DC collector current of up to 150 A and a gate-emitter leakage current of less than 100 nA. It is suitable for 470 V battery systems and offers smooth switching characteristics. This IGBT has a low EMI signature and gate charge, and can self limit the current under short circuit conditions. It has a positive thermal coefficient that ensures an easy paralleling operation, system flexibility, and power scalability. This RoHS compliant IGBT is available as a through-hole package that measures 15.70 x 40.7 mm and is ideal for use in xEV traction inverters, DC-link discharge switches, and automotive auxiliary drives.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Infineon Technologies
  • Description
    750 V Automotive Qualified IGBT


  • Types
    Single Switch IGBT
  • No. of Transistors
  • Gate Emitter Voltage
    -20 to 20 V
  • Dimensions
    15.70 x 40.7 mm
  • Saturated Collector Emitter Voltage
    1.3 V
  • DC Collector Current
    150 A
  • DC Forward Current
    150 A
  • Junction Temperature
    -40 to 175 degree C
  • Gate Emitter Leakage Current
    100 nA
  • Collector Emitter Voltage
    750 V
  • Power Dissipation
    341 to 682 W
  • Package Type
    Through Hole
  • Industry
  • Applications
    Traction inverter, Auxiliary Inverter, DC-link discharge switch
  • Qualification
  • RoHS Compliant

Technical Documents

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