APTGL120TA120TPG Image

APTGL120TA120TPG

Note : Your request will be directed to Microchip Technology.

The APTGL120TA120TPG from Microchip Technology is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 1.8 to 2.15 V, DC Collector Current 120 to 140 A, DC Forward Current 120 A, Gate Emitter Leakage Current 0.6 uA. More details for APTGL120TA120TPG can be seen below.

Product Specifications

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Product Details

  • Part Number
    APTGL120TA120TPG
  • Manufacturer
    Microchip Technology
  • Description
    1200 V, 3-Phase Trench IGBT Module

General

  • Types
    Three Phase Bridge IGBT, Field Stop Trench IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    20 V
  • Saturated Collector Emitter Voltage
    1.8 to 2.15 V
  • DC Collector Current
    120 to 140 A
  • DC Forward Current
    120 A
  • Gate Emitter Leakage Current
    0.6 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    517 W
  • Applications
    Welding converters, Switched Mode Power Supplies, Uninterruptible Power Supplies, Motor control

Technical Documents

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