Note : Your request will be directed to Microchip Technology.

APTGL40X120T3G Image

The APTGL40X120T3G from Microchip Technology is a Three-Phase Bridge Trench and Field Stop Power IGBT that is ideal for motor control applications. It has a collector-emitter breakdown voltage of up to 1200 V, a saturated collector-emitter voltage of 1.85 V. This SCSOA-rated IGBT module has a continuous collector current of less than 65 A and a gate-emitter leakage current of up to 400 nA. It has a power dissipation of less than 220 W. The Trench + Field Stop IGBT 4 offers numerous advantages, including low voltage drop, low leakage current, low switching losses, and low tail current. It features a Kelvin emitter for easy driving and very low stray inductance. This RBSOA-rated includes an internal thermistor that provides temperature monitoring.

This IGBT excels in high-frequency operations with outstanding performance, and its isolated package allows direct mounting to a heatsink. It also has low junction-to-case thermal resistance and solderable terminals for both power and signal, facilitating easy PCB mounting. This RoHS-compliant IGBT is available in a module that measures 73.40 x 12 mm.

Product Specifications

View similar products

Product Details

  • Part Number
  • Manufacturer
    Microchip Technology
  • Description
    1200 V Three-Phase Bridge Trench and Field Stop IGBT


  • Types
    Three Phase Bridge IGBT, Field Stop Trench IGBT
  • No. of Transistors
  • Gate Emitter Voltage
    20 V
  • Dimensions
    73.40 x 12 mm
  • Saturated Collector Emitter Voltage
    1.85 V
  • DC Collector Current
    65 A
  • DC Forward Current
    30 A
  • Gate Emitter Leakage Current
    400 nA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    220 W
  • Package
  • Package Type
  • Applications
    Motor Control
  • RoHS Compliant

Technical Documents