The AFGH75T65SQ from onsemi is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 1.6 to 2.1 V, DC Collector Current 75 to 80 A, Peak Collector Current 300 A, Gate Emitter Leakage Current 250 uA. More details for AFGH75T65SQ can be seen below.