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RBN40H125S1FPQ-A0 Image

The RBN40H125S1FPQ-A0 from Renesas is a Trench Gate IGBT that is ideal for UPS, welding, photovoltaic inverters, and power converter system applications. It has a collector-to-emitter voltage of up to 1250 V, a saturated collector-to-emitter voltage of 1.8 V, and a gate emitter threshold voltage of 5.3 - 7.1 V. This IGBT has a collector current of up to 80 A, DC forward current of less than 50 A, and gate emitter leakage current of up to +1 µA. It is manufactured using thin wafer technology and consists of a built-in fast recovery diode. This Trench Gate IGBT offers high-speed switching and short-circuits protection of over 10 µs. It is available in a through-hole package that measures 15.94 x 41.32 x 5.02 mm.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    1250 V Trench Gate IGBT for UPS & Welding Applications


  • Types
    Single Switch IGBT
  • No. of Transistors
  • Gate Emitter Voltage
    30 V
  • Dimensions
    15.94 x 41.32 x 5.02 mm
  • Saturated Collector Emitter Voltage
    1.8 V
  • DC Collector Current
    80 A
  • Peak Collector Current
    160 A
  • DC Forward Current
    50 A
  • Peak Forward Current
    160 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    1 uA
  • Collector Emitter Voltage
    1250 V
  • Power Dissipation
    319 W
  • Package
  • Package Type
    Through Hole
  • Applications
    UPS, Welding, photovoltaic inverters, Power converter system

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