RGWS00TS65

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RGWS00TS65 Image

The RGWS00TS65 from ROHM Semiconductor is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.6 V, DC Collector Current 50 A, Junction Temperature -40 to 175 Degree C, Gate Emitter Leakage Current -0.2 to 0.2 uA. More details for RGWS00TS65 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RGWS00TS65
  • Manufacturer
    ROHM Semiconductor
  • Description
    650 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.6 V
  • DC Collector Current
    50 A
  • Junction Temperature
    -40 to 175 Degree C
  • Gate Emitter Leakage Current
    -0.2 to 0.2 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    245 W
  • Package
    TO-247GE
  • Package Type
    Through Hole
  • Applications
    PFC, Solar converters, Mid to high switching frequency converters
  • RoHS Compliant
    Yes

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