STGD5H60DF

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STGD5H60DF Image

The STGD5H60DF from STMicroelectronics is a Field-Stop Trench IGBT that is ideal for UPS, PFC, and motor control applications. It has a collector-emitter breakdown voltage of over 600 V, collector-emitter saturation voltage of up to 1.6 V, and gate-emitter voltage of less than 20 V. This IGBT has a collector current of up to 10 A and a gate-emitter leakage current of less than 250 nA. It has a power dissipation of up to 83 W and is built using an advanced proprietary trench gate field-stop structure that integrates an ultrafast soft recovery anti-parallel diode. The IGBT has a slightly positive temperature coefficient and very tight parameter distribution that result in a safe paralleling operation.

This STGD5H60DF provides an optimum compromise between conduction and switching losses to enhance the efficiency of high switching frequency converters. It is available in a surface-mount package that measures 6.4 x 9.35 mm.

Product Specifications

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Product Details

  • Part Number
    STGD5H60DF
  • Manufacturer
    STMicroelectronics
  • Description
    600 V Field-Stop Trench IGBT for UPS & Motor Control Applications

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    20 V
  • Dimensions
    6.4 x 9.35 mm
  • Saturated Collector Emitter Voltage
    1.6 V
  • DC Collector Current
    10 A
  • DC Forward Current
    5 to 10 A
  • Gate Emitter Leakage Current
    0.25 uA
  • Operating Temperature
    -55 to 175 Degree C
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    83 W
  • Package
    DPAK
  • Package Type
    Surface Mount
  • Applications
    Motor control, UPS, PFC

Technical Documents