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GT30J65MRB

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GT30J65MRB Image

The GT30J65MRB from Toshiba is a IGBT with Gate Emitter Voltage 25 V, Saturated Collector Emitter Voltage 1.8 V, DC Collector Current 60 A, Peak Collector Current 120 A, DC Forward Current 30 A. More details for GT30J65MRB can be seen below.

Product Specifications

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Product Details

  • Part Number
    GT30J65MRB
  • Manufacturer
    Toshiba
  • Description
    650 V IGBT for Power Factor Applications

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    25 V
  • Saturated Collector Emitter Voltage
    1.8 V
  • DC Collector Current
    60 A
  • Peak Collector Current
    120 A
  • DC Forward Current
    30 A
  • Peak Forward Current
    60 A
  • Junction Temperature
    -55 to 175 Degree C
  • Gate Emitter Leakage Current
    100 nA
  • Operating Temperature
    -55 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    200 W
  • Package
    TO-3P(N)
  • Package Type
    Through Hole
  • Applications
    Power Factor Correction (PFC)

Technical Documents
View details on the manufacturer's website
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