The GT30J65MRB,S1E from Toshiba is a Silicon N-Channel Enhancement Mode IGBT that is ideal for power factor correction (PFC), current-resonant inverter switching, and welding applications. It has a collector-emitter voltage of less than 650 V, a saturated collector-emitter voltage of 1.4 V, a gate threshold voltage of up to 6.2 V. This IGBT has a collector current of less than 60 A and a power dissipation of up to 200 W. It is based on the 7th generation technology where the RC-IGBT monolithically integrates a freewheeling diode on a single chip. This RoHS-compliant IGBT provides high-speed switching with a rise time of 25 ns and a fall time of 40 ns. It is available in a through-hole package that measures 15.5 x 4.5 mm.