VS-ETF075Y60U

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VS-ETF075Y60U Image

The VS-ETF075Y60U from Vishay is a IGBT with Gate Emitter Voltage 20 V, DC Collector Current 40 to 154 A, DC Forward Current 28 to 78 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.2 to 0.4 uA. More details for VS-ETF075Y60U can be seen below.

Product Specifications

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Product Details

  • Part Number
    VS-ETF075Y60U
  • Manufacturer
    Vishay
  • Description
    600 V Half Bridge IGBT Module

General

  • Types
    Half Bridge IGBT
  • No. of Transistors
    Quad
  • Gate Emitter Voltage
    20 V
  • DC Collector Current
    40 to 154 A
  • DC Forward Current
    28 to 78 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.2 to 0.4 uA
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    68 to 405 W
  • Package
    EMIPAK 2B
  • Package Type
    Chassis Mount
  • RoHS Compliant
    Yes

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