VS-GT75NA60UF

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The VS-GT75NA60UF from Vishay is a High-Side Chopper Trench IGBT that is ideal for increased operating efficiency in power conversion, UPS, SMPS, welding, and induction heating applications. It has a collector-emitter breakdown voltage of over 600 V, a gate threshold voltage of 3.9 V, and a saturated collector-emitter voltage of 1.60 V. This IGBT has a continuous collector current of up to 61 A and a pulsed collector current of less than 170 A. It is based on FRED Pt hyperfast rectifier technology and offers a low on-state voltage. This IGBT minimizes both conduction and switching losses along with reduced electromagnetic interference (EMI).

This IGBT is housed in a fully isolated package with very low internal inductance (≤ 5 nH). It also allows direct mounting to heatsinks and has plug-in compatibility with similar packages, making it versatile for parallel use and system integration. This UL-approved IGBT is available in a surface-mount package that measures 37.80 x 24.70 mm.

Product Specifications

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Product Details

  • Part Number
    VS-GT75NA60UF
  • Manufacturer
    Vishay
  • Description
    600 V High-Side Chopper Trench IGBT for UPS Applications

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Dimensions
    37.80 x 24.70 mm
  • Saturated Collector Emitter Voltage
    1.79 V
  • DC Collector Current
    61 A
  • DC Forward Current
    75 to 113 A
  • Junction Temperature
    -40 to 175 Degree C
  • Gate Emitter Leakage Current
    -0.25 to 0.25
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    146 to 231 W
  • Package
    SOT-227
  • Package Type
    Surface Mount
  • Applications
    UPS, SMPS
  • RoHS Compliant
    Yes

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