J175

Junction Field Effect Transistor (JFET) by New Jersey Semiconductor (218 more products)

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The J175 from New Jersey Semiconductor is a Junction Field Effect Transistor (JFET) with Gate Source Voltage 30 V, Continous Drain Current 7 to 70 mA, Drain Source Breakdown Voltage ±30 V, Drain Source Resistance 125 Ohm, Gate Current 50 mA. Tags: Through Hole. More details for J175 can be seen below.

Product Specifications

Product Details

  • Part Number
    J175
  • Manufacturer
    New Jersey Semiconductor
  • Description
    30 V, 50 mA, P-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial
  • Technology
    Silicon
  • Transistor Polarity
    P-Channel
  • Number of Channel
    Single
  • Gate Source Voltage
    30 V
  • Continous Drain Current
    7 to 70 mA
  • Drain Source Breakdown Voltage
    ±30 V
  • Drain Source Resistance
    125 Ohm
  • Gate Current
    50 mA
  • Gate Reverse Current
    1 nA
  • Power Dissipation
    0.4 W
  • Operating Temperature
    -65 to 150 Degree C
  • Input Capacitance
    8 pF
  • Package Type
    Through Hole
  • Package
    TO-92
  • Fall Time
    20 ns
  • Rise Time
    10 ns

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