LS5912

Junction Field Effect Transistor (JFET) by New Jersey Semiconductor (218 more products)

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The LS5912 from New Jersey Semiconductor is a Junction Field Effect Transistor (JFET) with Gate Source Voltage 35 V, Continous Drain Current 40 mA, Drain Source Breakdown Voltage 30 V, Power Dissipation 0.5 W, Operating Temperature -55 to 150 Degree C. Tags: Through Hole. More details for LS5912 can be seen below.

Product Specifications

Product Details

  • Part Number
    LS5912
  • Manufacturer
    New Jersey Semiconductor
  • Description
    0.5 W, 35 V, N-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial
  • Transistor Polarity
    N-Channel
  • Number of Channel
    Dual
  • Gate Source Voltage
    35 V
  • Continous Drain Current
    40 mA
  • Drain Source Breakdown Voltage
    30 V
  • Power Dissipation
    0.5 W
  • Operating Temperature
    -55 to 150 Degree C
  • Package Type
    Through Hole
  • Package
    TO-72