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PN4360

Junction Field Effect Transistor (JFET) by New Jersey Semiconductor (218 more products)
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PN4360 Image

The PN4360 from New Jersey Semiconductor is a Junction Field Effect Transistor (JFET) with Drain Saturation Current 3.0 to 30 mA, Gate Source Voltage -40 V, Forward Transfer Admittance 2.0 mS, Drain Source Breakdown Voltage 0.4 V, Power Dissipation 0.35 W. Tags: Through Hole. More details for PN4360 can be seen below.

Product Specifications

Product Details

  • Part Number
    PN4360
  • Manufacturer
    New Jersey Semiconductor
  • Description
    0.35 W, -40 V, P-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial
  • Transistor Polarity
    P-Channel
  • Drain Saturation Current
    3.0 to 30 mA
  • Number of Channel
    Single
  • Gate Source Voltage
    -40 V
  • Forward Transfer Admittance
    2.0 mS
  • Drain Source Breakdown Voltage
    0.4 V
  • Power Dissipation
    0.35 W
  • Operating Temperature
    -55 to 150 Degree C
  • Input Capacitance
    20 pF
  • Package Type
    Through Hole
  • Package
    TO-92

Technical Documents
View details on the manufacturer's website
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