Junction Field Effect Transistor (JFET) by NXP Semiconductors (5 more products)

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PMBFJ108,215 Image

The PMBFJ108 from NXP Semiconductors is a Symmetrical N-channel Junction Field Effect Transistor that is ideal for high-speed switching applications. It has a gate-drain voltage and a gate-source voltage of -25 V. This junction field effect transistor (JFET) has a power dissipation of less than 250 mW. It benefits from the interchangeability of drain and source connections and has low drain-source on-resistance for zero gate voltage. This JFET is available in a surface-mount package that measures 3.0 x 1.4 x 1.1 mm and is ideal for analog switches, choppers, commutators, and audio amplifier applications.

Product Specifications

Product Details

  • Part Number
  • Manufacturer
    NXP Semiconductors
  • Description
    Symmetrical N-channel Junction Field Effect Transistor for Switching Applications


  • Industry
    Industrial, Commercial
  • Transistor Polarity
  • Number of Channel
  • Gate Source Voltage
    -25 V
  • Drain Source Resistance
    8 Ohm
  • Gate Current
    50 mA
  • Power Dissipation
    250 mW
  • Input Capacitance
    15 to 85 pF
  • Package Type
    Surface Mount
  • Package
  • Fall Time
    6 ns
  • Rise Time
    4 ns
  • Application
    Analog switches, Choppers and commutators, Audio amplifiers
  • Note
    drain-source leakage current (Idss) :- 80 mA

Technical Documents