2N5912

Junction Field Effect Transistor (JFET) by Solitron Devices (55 more products)

Note : Your request will be directed to Solitron Devices.

The 2N5912 from Solitron Devices is a Junction Field Effect Transistor (JFET) with Gate Source Voltage -25 V, Forward Transfer Admittance 3000 to 10000 µS, Continous Drain Current 5 mA, Gate Current 50 mA, Gate Reverse Current -250 nA. Tags: Through Hole. More details for 2N5912 can be seen below.

Product Specifications

Product Details

  • Part Number
    2N5912
  • Manufacturer
    Solitron Devices
  • Description
    0.25 W, -25 V, 50 mA, N-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial, Military
  • Transistor Polarity
    N-Channel
  • Number of Channel
    Dual
  • Gate Source Voltage
    -25 V
  • Forward Transfer Admittance
    3000 to 10000 µS
  • Continous Drain Current
    5 mA
  • Gate Current
    50 mA
  • Gate Reverse Current
    -250 nA
  • Power Dissipation
    0.25 W
  • Operating Temperature
    -55 to 150 Degree C
  • Input Capacitance
    5 pF
  • Noise Figure
    1 dB
  • Package Type
    Through Hole
  • Package
    TO-78

Technical Documents