JAN2N5115

Junction Field Effect Transistor (JFET) by Solitron Devices (55 more products)

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The JAN2N5115 from Solitron Devices is a Junction Field Effect Transistor (JFET) with Gate Source Voltage 30 V, Drain Source Resistance 100 Ohm, Gate Current 50 mA, Gate Reverse Current 500 pA, Power Dissipation 0.5 W. Tags: Through Hole. More details for JAN2N5115 can be seen below.

Product Specifications

Product Details

  • Part Number
    JAN2N5115
  • Manufacturer
    Solitron Devices
  • Description
    0.5 W, 30 V, 50 mA, P-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial, Military
  • Transistor Polarity
    P-Channel
  • Number of Channel
    Single
  • Gate Source Voltage
    30 V
  • Drain Source Resistance
    100 Ohm
  • Gate Current
    50 mA
  • Gate Reverse Current
    500 pA
  • Power Dissipation
    0.5 W
  • Operating Temperature
    -65 to 200 Degree C
  • Input Capacitance
    25 pF
  • Package Type
    Through Hole
  • Package
    TO-18
  • Fall Time
    8 ns
  • Rise Time
    20 ns

Technical Documents