ALD1101ASAL

Note : Your request will be directed to Advanced Linear Devices.

The ALD1101ASAL from Advanced Linear Devices is a MOSFET with Continous Drain Current 0.025 to 0.04 A, Drain Source Resistance 50000 to 750000 milliohm, Drain Source Breakdown Voltage 10 V, Gate Source Voltage 10 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for ALD1101ASAL can be seen below.

Product Specifications

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Product Details

  • Part Number
    ALD1101ASAL
  • Manufacturer
    Advanced Linear Devices
  • Description
    10 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.025 to 0.04 A
  • Drain Source Resistance
    50000 to 750000 milliohm
  • Drain Source Breakdown Voltage
    10 V
  • Gate Source Voltage
    10 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Power Dissipation
    0.5 W
  • Temperature operating range
    0 to 70 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOIC
  • Applications
    Precision current mirrors, Precision current sources, Analog switches, Choppers, Differential amplifier input stage, Voltage comparator, Data converters, Sample and Hold, Analog inverter

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