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The ALD1107PBL from Advanced Linear Devices is a MOSFET with Continous Drain Current -0.002 to -0.0013 A, Drain Source Resistance 1200000 to 1800000 milliohm, Drain Source Breakdown Voltage -10 V, Gate Source Voltage -10 V, Gate Source Threshold Voltage -1.2 to -0.4 V. Tags: Through Hole. More details for ALD1107PBL can be seen below.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Advanced Linear Devices
  • Description
    -10 V, P-Channel Enhancement Mode MOSFET


  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
  • Number of Channels
  • Continous Drain Current
    -0.002 to -0.0013 A
  • Drain Source Resistance
    1200000 to 1800000 milliohm
  • Drain Source Breakdown Voltage
    -10 V
  • Gate Source Voltage
    -10 V
  • Gate Source Threshold Voltage
    -1.2 to -0.4 V
  • Power Dissipation
    0.5 W
  • Temperature operating range
    0 to 70 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
  • Package Type
    Through Hole
  • Package
    14-Pin Plastic Dip
  • Applications
    Precision current mirrors, Precision current sources, Voltage choppers, Differential amplifier input stage, Voltage comparator, Data converters, Sample and Hold, Analog signal processing

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