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ALD110908SAL Image

The ALD110908SAL from Advanced Linear Devices is an N-Channel Enhancement Mode MOSFET. It has a drain-source breakdown voltage of over 10.6 V, a gate threshold voltage of up to 0.82 V, and a drain-source on-resistance of less than 500 ohms. This MOSFET has a continuous drain current of up to 12 mA and a power dissipation of less than 500 mW. It benefits from matching at the factory using ALD’s proven EPAD CMOS technology. This MOSFET has low input capacitance, low input, and output leakage currents, and excellent temperature tracking characteristics. It is available in a surface-mount package that measures 7.11 x 21.33 x 5.08 mm and is ideal for low-voltage, small-signal applications such as precision current mirrors and current sources, voltage choppers, differential amplifier input stage, voltage comparator, voltage bias circuits, sample and hold, analog inverter, level shifters, source followers and buffers, current multipliers, and analog switches/multiplexer applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Advanced Linear Devices
  • Description
    10.6 V N-Channel Enhancement Mode MOSFET


  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
  • Dimensions
    7.11 x 21.33 x 5.08 mm
  • Number of Channels
  • Continous Drain Current
    12 mA
  • Drain Source Resistance
    500 ohm
  • Drain Source Breakdown Voltage
    10.6 V
  • Gate Source Threshold Voltage
    0.82 V
  • Power Dissipation
    500 mW
  • Temperature operating range
    0 to 70 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
  • Package Type
    Surface Mount
  • Package
  • Applications
    Precision current mirrors, Precision current sources, Voltage choppers, Differential amplifier input stage, Voltage comparator, Voltage bias circuits, Sample and Hold, Analog inverter, Level shifters, Source followers and buffers, Current multipliers, Ana

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