AP2P038Y

Note : Your request will be directed to Advanced Power Electronics Corp.

The AP2P038Y from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current -4.8 to -6 A, Drain Source Resistance 38 to 64 milli-ohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -0.3 to -1 V. Tags: Surface Mount. More details for AP2P038Y can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP2P038Y
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    2 W, -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -4.8 to -6 A
  • Drain Source Resistance
    38 to 64 milli-ohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -0.3 to -1 V
  • Gate Charge
    14.5 to 23.2 nC
  • Switching Speed
    10 to 47 ns
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-26
  • Note
    Input Capacitance :- 2320 pF