AP2P053N

Note : Your request will be directed to Advanced Power Electronics Corp.

The AP2P053N from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current -3.4 to -4.2 A, Drain Source Resistance 53 to 100 milli-ohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -0.5 to -1.2 V. Tags: Surface Mount. More details for AP2P053N can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP2P053N
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    1.25 W, -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -3.4 to -4.2 A
  • Drain Source Resistance
    53 to 100 milli-ohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -0.5 to -1.2 V
  • Gate Charge
    10 to 16 nC
  • Switching Speed
    8 to 38 ns
  • Power Dissipation
    1.25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-23S
  • Note
    Input Capacitance :- 1600 pF