AP3838CDT33

Note : Your request will be directed to Advanced Power Electronics Corp.

The AP3838CDT33 from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 18.8 to 50 A, Drain Source Resistance 4.2 to 5.9 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 1.1 to 1.9 V. Tags: Surface Mount. More details for AP3838CDT33 can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP3838CDT33
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    32.8 W, 30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    18.8 to 50 A
  • Drain Source Resistance
    4.2 to 5.9 milli-ohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    1.1 to 1.9 V
  • Gate Charge
    12 to 32.5 nC
  • Switching Speed
    7 to 55 ns
  • Power Dissipation
    32.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PDFN3.3x3.3B-DLR
  • Note
    Input Capacitance :- 1500 pF