AP6932MT

Note : Your request will be directed to Advanced Power Electronics Corp.

The AP6932MT from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 11.3 to 40 A, Drain Source Resistance 2.5 to 8.8 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.3 to 2.2 V. Tags: Surface Mount. More details for AP6932MT can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    AP6932MT
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    30 V, 2.08 W, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    11.3 to 40 A
  • Drain Source Resistance
    2.5 to 8.8 milli-ohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.3 to 2.2 V
  • Gate Charge
    19 to 64 nC
  • Switching Speed
    3 to 54 ns
  • Power Dissipation
    2.08 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PMPAK
  • Note
    Input Capacitance :- 3920 pF