AP6N090LK

Note : Your request will be directed to Advanced Power Electronics Corp.

The AP6N090LK from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 3.3 to 4.1 A, Drain Source Resistance 90 to 110 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.8 to 2.5 V. Tags: Surface Mount. More details for AP6N090LK can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    AP6N090LK
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    60 V, 2.78 W, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.3 to 4.1 A
  • Drain Source Resistance
    90 to 110 milli-ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.8 to 2.5 V
  • Gate Charge
    10 to 16 nC
  • Switching Speed
    3 to 15 ns
  • Power Dissipation
    2.78 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-223
  • Note
    Input Capacitance :- 672 pF