AP6N100H

Note : Your request will be directed to Advanced Power Electronics Corp.

The AP6N100H from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 4.7 to 7.5 A, Drain Source Resistance 100 to 125 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for AP6N100H can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP6N100H
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    60 V, 12.5 W, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4.7 to 7.5 A
  • Drain Source Resistance
    100 to 125 milli-ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    10 to 16 nC
  • Switching Speed
    2 to 13 ns
  • Power Dissipation
    12.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Note
    Input Capacitance :- 672 pF