AP6NA2R4P

Note : Your request will be directed to Advanced Power Electronics Corp.

The AP6NA2R4P from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 111 to 175 A, Drain Source Resistance 2.4 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for AP6NA2R4P can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    AP6NA2R4P
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    60 V, 125 W, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    111 to 175 A
  • Drain Source Resistance
    2.4 milli-ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    120 to 192 nC
  • Switching Speed
    35 to 126 ns
  • Power Dissipation
    125 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Note
    Input Capacitance :- 11680 pF