AP6NA3R4LIT

Note : Your request will be directed to Advanced Power Electronics Corp.

The AP6NA3R4LIT from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 48.8 to 77 A, Drain Source Resistance 3.4 to 5.4 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 3 V. Tags: Through Hole. More details for AP6NA3R4LIT can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP6NA3R4LIT
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    60 V, 32.9 W, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    48.8 to 77 A
  • Drain Source Resistance
    3.4 to 5.4 milli-ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 3 V
  • Gate Charge
    65 to 104 nC
  • Switching Speed
    12 to 52 ns
  • Power Dissipation
    32.9 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220CFM-T
  • Note
    Input Capacitance :- 4800 pF