AP8N4R2MT

Note : Your request will be directed to Advanced Power Electronics Corp.

The AP8N4R2MT from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 21 to 120 A, Drain Source Resistance 4.2 milli-ohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 5 V. Tags: Surface Mount. More details for AP8N4R2MT can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP8N4R2MT
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    80 V, 21 to 120 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    21 to 120 A
  • Drain Source Resistance
    4.2 milli-ohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 5 V
  • Gate Charge
    61 to 107 nC
  • Switching Speed
    26 to 60 ns
  • Power Dissipation
    104 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PMPAK
  • Note
    Input Capacitance :- 6800 pF