AP9962AGM-HF

Note : Your request will be directed to Advanced Power Electronics Corp.

The AP9962AGM-HF from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 5.5 to 7 A, Drain Source Resistance 25 to 40 milli-ohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for AP9962AGM-HF can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP9962AGM-HF
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    40 V, 5.5 to 7 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    5.5 to 7 A
  • Drain Source Resistance
    25 to 40 milli-ohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    12 to 30 nC
  • Switching Speed
    5.5 to 23 ns
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Note
    Input Capacitance :- 1350 pF