AOK065V120X2

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The AOK065V120X2 from Alpha & Omega Semiconductor (AOS) is a Silicon Carbide Power MOSFET that is ideal for industrial and renewable energy applications such as EV chargers, solar inverters, UPS, SMPS, and motor drive applications. It has a drain-source breakdown voltage of over 1200 V, a gate threshold voltage of 2.8 V, and a drain-source on-resistance of less than 65 milli-ohms. This power MOSFET has a continuous drain current of up to 40.3 A and a power dissipation of less than 187.5 W. It is based on AOS' proprietary αSiC MOSFET technology that delivers high efficiency, high thermal performance, high switching speeds, and a greater voltage capability. This MOSFET has an optimized drive voltage for broad driver compatibility. It also has a robust body diode with a low reverse recovery charge, which makes it suitable for bidirectional power applications. This RoHS-compliant MOSFET is available in a surface-mount package that measures 40.62 x 15.70 mm.

Product Specifications

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Product Details

  • Part Number
    AOK065V120X2
  • Manufacturer
    Alpha & Omega Semiconductor
  • Description
    1200 V Silicon Carbide Power MOSFET for Renewable Energy Applications

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Dimensions
    40.62 x 15.70 mm
  • Number of Channels
    Single
  • Continous Drain Current
    40.3 A
  • Drain Source Resistance
    65 milli-ohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -8 to 18 V
  • Gate Source Threshold Voltage
    1.8 to 3.5 V
  • Gate Charge
    62.3 nC
  • Power Dissipation
    187.5 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-247-3L
  • Applications
    Renewable Industrial, EV Charger, UPS, Solar Inverters, SMPS, Motor Drives

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