AONA66916

Note : Your request will be directed to Alpha & Omega Semiconductor.

AONA66916 Image

The AONA66916 from Alpha & Omega Semiconductor is an N-Channel Enhancement Mode Power MOSFET that is ideal for telecom, solar, and DC-DC applications. It has a drain-source breakdown voltage of over 100 V, a gate threshold voltage of up to 3 V, and a drain-source on-resistance of less than 3.4 milli-ohms. This MOSFET has a continuous drain current of up to 197 A and a power dissipation of less than 300 W. It utilizes AOS's medium voltage AlphaSGT technology that offers high inrush current tolerance for faster start-up and shorter down time while functioning over a wide safe operating area (SOA). This RoHS-Compliant MOSFET is provided with top-side cooling for improved thermal performance, making it suitable for power supply applications. It is available in a surface-mount package that measures 5 x 6 mm.

Product Specifications

View similar products

Product Details

  • Part Number
    AONA66916
  • Manufacturer
    Alpha & Omega Semiconductor
  • Description
    100 V N-Channel Enhancement Mode Power MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Dimensions
    5 x 6 mm
  • Number of Channels
    Single
  • Continous Drain Current
    197 A
  • Drain Source Resistance
    3.4 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    3 V
  • Gate Charge
    66 nC
  • Power Dissipation
    300 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN
  • Applications
    Telecom, Solar, DC-DC

Technical Documents