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AONS30300 Image

The AONS30300 from Alpha and Omega Semiconductor is an N-Channel Enhancement Mode Trench Power MOSFET that is ideal for high-performance OR-ing, E-Fuse, and ultra-high current battery charging/discharging applications. It has a drain-source breakdown voltage of over 30 V, a gate threshold voltage of 1.2 V, and a drain-source on-resistance of less than 580 milli-ohms. This MOSFET has a continuous drain current of up to 710 A and a power dissipation of less than 483 W. It exhibits a high current handling capability and offers a low drain-source on-resistance in a compact package. This RoHS 2-compliant MOSFET is available in a surface-mount package.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Alpha & Omega Semiconductor
  • Description
    30 V N-Channel Enhancement Mode Trench Power MOSFET


  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
  • Dimensions
    5 x 6 mm
  • Number of Channels
  • Continous Drain Current
    710 A
  • Drain Source Resistance
    580 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 V
  • Gate Charge
    150 nC
  • Power Dissipation
    483 W
  • Temperature operating range
    -55 to 175 degree C
  • Industry
  • RoHS Compliant
  • Package Type
    Surface Mount
  • Package
    DFN 5x6
  • Applications
    High performance ORing, Efuse, Ultra high current battery charge/discharge

Technical Documents