AOTL66810Q

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The AOTL66810Q from Alpha & Omega Semiconductor is an Automotive Qualified N-Channel Power MOSFET that is ideal for BLDC motor drive, battery management, and load switch applications. It has a drain-source breakdown voltage of over 80 V, a gate threshold voltage of 3 V, and a drain-source on-resistance of less than 1.45 milli-ohms. This AEC-Q101-qualified power MOSFET has a continuous drain current of up to 420 A and a power dissipation of less than 425 W. It employs AOS's medium voltage AlphaSGT technology that offers excellent gate charge x drain-source on-resistance product value, resulting in improved figure of merit (FOM) to ensure balanced performance in hard-switching applications. This RoHS-Compliant MOSFET is available in a surface-mount package that measures 5 x 6 mm.

Product Specifications

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Product Details

  • Part Number
    AOTL66810Q
  • Manufacturer
    Alpha & Omega Semiconductor
  • Description
    80 V Automotive Qualified N-Channel Power MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Dimensions
    5 x 6 mm
  • Continous Drain Current
    420 A
  • Drain Source Resistance
    1.45 milli-ohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    3 V
  • Industry
    Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Applications
    BLDC motor drive, battery management, and load switch

Technical Documents