CXT-PLA3SA12340A

MOSFET by Cissoid (1 more product)

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CXT-PLA3SA12340A Image

The CXT-PLA3SA12340A from Cissoid is an N-Channel Enhancement Mode SiC MOSFET that is ideal for electrical vehicle (EV) motor drives, heavy-duty motor drives, active rectifiers, and industrial motor drive applications. It has a drain-to-source breakdown voltage of over 1200 V and a drain-source on-resistance of 4.19 mΩ. This power MOSFET has a gate threshold voltage of 2.2 V, a continuous drain current of up to 340 A, and a pulsed drain current of less than 720 A. It uses SiC technology to achieve high efficiency, high power density, and high reliability and simultaneously provides low switching losses and high-temperature junction. The MOSFET is integrated with a gate driver that offers desaturation protection, under-voltage lockout (UVLO), active miller clamping (AMC), and soft shutdown turn-off (SSD) to prevent false operation and over-voltage-related damages. It is available in a surface-mount package that measures 104 x 154 x 34 mm.

Product Specifications

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Product Details

  • Part Number
    CXT-PLA3SA12340A
  • Manufacturer
    Cissoid
  • Description
    1200 V N-Channel Enhancement Mode SiC MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Dimensions
    104 x 154 x 34 mm
  • Number of Channels
    Single
  • Continous Drain Current
    340 A
  • Drain Source Resistance
    4.19 milliohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Threshold Voltage
    2.2 V
  • Gate Charge
    682 nC
  • Temperature operating range
    175 ºC
  • Industry
    Automotive
  • Package Type
    Surface Mount
  • Applications
    Electrical vehicle (EV) motor drives, Heavy-duty motor drives, Active rectifiers, Industrial motor drive applications

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