The CXT-PLA3SA12340A from Cissoid is an N-Channel Enhancement Mode SiC MOSFET that is ideal for electrical vehicle (EV) motor drives, heavy-duty motor drives, active rectifiers, and industrial motor drive applications. It has a drain-to-source breakdown voltage of over 1200 V and a drain-source on-resistance of 4.19 mΩ. This power MOSFET has a gate threshold voltage of 2.2 V, a continuous drain current of up to 340 A, and a pulsed drain current of less than 720 A. It uses SiC technology to achieve high efficiency, high power density, and high reliability and simultaneously provides low switching losses and high-temperature junction. The MOSFET is integrated with a gate driver that offers desaturation protection, under-voltage lockout (UVLO), active miller clamping (AMC), and soft shutdown turn-off (SSD) to prevent false operation and over-voltage-related damages. It is available in a surface-mount package that measures 104 x 154 x 34 mm.