CMS45N10H8-HF

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CMS45N10H8-HF Image

The CMS45N10H8-HF from Comchip Technology is an N-Channel MOSFET that is ideal for fast switching applications. It has a drain-source breakdown voltage of over 100 V, a gate threshold voltage of 1.5 V, and a drain-source on-resistance of less than 20 milli-ohms. This MOSFET is equipped with improved dv/dt capability to support high speed applications. It is available in a surface-mount package that measures 5.40 x 6.35 mm.

Product Specifications

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Product Details

  • Part Number
    CMS45N10H8-HF
  • Manufacturer
    Comchip Technology
  • Description
    100 V N-Channel Fast Switching MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Dimensions
    5.40 x 6.35 mm
  • Number of Channels
    Single
  • Continous Drain Current
    45 A
  • Drain Source Resistance
    20 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.5 V
  • Gate Charge
    16.2 nC
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    P-Pak

Technical Documents