The CMS45N10H8-HF from Comchip Technology is an N-Channel MOSFET that is ideal for fast switching applications. It has a drain-source breakdown voltage of over 100 V, a gate threshold voltage of 1.5 V, and a drain-source on-resistance of less than 20 milli-ohms. This MOSFET is equipped with improved dv/dt capability to support high speed applications. It is available in a surface-mount package that measures 5.40 x 6.35 mm.