D3S080N65E-U

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The D3S080N65E-U from D3 Semiconductor is a MOSFET with Continous Drain Current 25.8 to 40.8 A, Drain Source Resistance 62 to 183 milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.3 to 3.7 V. Tags: Surface Mount. More details for D3S080N65E-U can be seen below.

Product Specifications

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Product Details

  • Part Number
    D3S080N65E-U
  • Manufacturer
    D3 Semiconductor
  • Description
    650 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    25.8 to 40.8 A
  • Drain Source Resistance
    62 to 183 milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.3 to 3.7 V
  • Gate Charge
    77 nC
  • Power Dissipation
    305 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-263
  • Applications
    Power Factor Correction, Server Power Supplies, Telecom Power Supplies, Inverters, Motor Control

Technical Documents