D3S380N65E-T

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The D3S380N65E-T from D3 Semiconductor is a MOSFET with Continous Drain Current 7.1 to 11.2 A, Drain Source Resistance 320 to 860 milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.3 to 4.5 V. Tags: Surface Mount. More details for D3S380N65E-T can be seen below.

Product Specifications

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Product Details

  • Part Number
    D3S380N65E-T
  • Manufacturer
    D3 Semiconductor
  • Description
    650 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7.1 to 11.2 A
  • Drain Source Resistance
    320 to 860 milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.3 to 4.5 V
  • Gate Charge
    16 nC
  • Power Dissipation
    114 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-263
  • Applications
    Power Factor Correction, Server Power Supplies, Telecom Power Supplies, Inverters, Motor Control

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