DMG1026UV

Note : Your request will be directed to Diodes Incorporated.

DMG1026UV Image

The DMG1026UV from Diodes Incorporated is a MOSFET with Continous Drain Current 0.41 A, Drain Source Resistance 1200 to 2100 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.5 to 1.8 V. Tags: Surface Mount. More details for DMG1026UV can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMG1026UV
  • Manufacturer
    Diodes Incorporated
  • Description
    60 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.41 A
  • Drain Source Resistance
    1200 to 2100 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.5 to 1.8 V
  • Gate Charge
    0.045 nC
  • Power Dissipation
    0.58 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT563
  • Applications
    Battery Operated Systems and Solid-State Relays, Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, DC-DC Converters, Power Management Functions

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