DMJ65H430SCTI

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DMJ65H430SCTI Image

The DMJ65H430SCTI from Diodes Incorporated is a MOSFET with Continous Drain Current 14 A, Drain Source Resistance 340 to 430 milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 5 V. Tags: Through Hole. More details for DMJ65H430SCTI can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMJ65H430SCTI
  • Manufacturer
    Diodes Incorporated
  • Description
    650 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    14 A
  • Drain Source Resistance
    340 to 430 milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 5 V
  • Gate Charge
    24.5 nC
  • Power Dissipation
    50 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    ITO220AB
  • Applications
    Motor Control, Backlighting, DC-DC Converters, Power Management Functions

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