DMN2011UFDF

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The DMN2011UFDF from Diodes Incorporated is a MOSFET with Continous Drain Current 11.7 A, Drain Source Resistance 6.5 to 35 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for DMN2011UFDF can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN2011UFDF
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    11.7 A
  • Drain Source Resistance
    6.5 to 35 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Gate Charge
    24 nC
  • Power Dissipation
    2.1 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    U-DFN2535-6
  • Applications
    General Purpose Interfacing Switch, Power Management Functions

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