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DMN2016LFG

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The DMN2016LFG from Diodes Incorporated is a MOSFET with Continous Drain Current 5.2 A, Drain Source Resistance 13 to 30 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.4 to 1.1 V. Tags: Surface Mount. More details for DMN2016LFG can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN2016LFG
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    5.2 A
  • Drain Source Resistance
    13 to 30 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.4 to 1.1 V
  • Gate Charge
    16 nC
  • Power Dissipation
    0.77 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    U-DFN3030-8
  • Applications
    Power Management Functions, Battery Pack, Load Switch

Technical Documents
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