DMN21D2UFB

Note : Your request will be directed to Diodes Incorporated.

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The DMN21D2UFB from Diodes Incorporated is a MOSFET with Continous Drain Current 0.76 A, Drain Source Resistance 600 to 3000 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for DMN21D2UFB can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN21D2UFB
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.76 A
  • Drain Source Resistance
    600 to 3000 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Gate Charge
    0.41 nC
  • Power Dissipation
    0.9 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    X1-DFN1006-3
  • Applications
    General Purpose Interfacing Switch, Power Management Functions, Analog switch

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