DMN33D8L

Note : Your request will be directed to Diodes Incorporated.

DMN33D8L Image

The DMN33D8L from Diodes Incorporated is a MOSFET with Continous Drain Current 0.25 A, Drain Source Resistance 3000 to 3800 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for DMN33D8L can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN33D8L
  • Manufacturer
    Diodes Incorporated
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.25 A
  • Drain Source Resistance
    3000 to 3800 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    1.2 nC
  • Power Dissipation
    0.52 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT23
  • Applications
    Motor Control, Power Management Functions, Backlighting

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