DMN6070SSDQ

Note : Your request will be directed to Diodes Incorporated.

DMN6070SSDQ Image

The DMN6070SSDQ from Diodes Incorporated is a MOSFET with Continous Drain Current 3.3 A, Drain Source Resistance 68 to 100 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for DMN6070SSDQ can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    DMN6070SSDQ
  • Manufacturer
    Diodes Incorporated
  • Description
    60 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    3.3 A
  • Drain Source Resistance
    68 to 100 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    5.6 to 12.3 nC
  • Power Dissipation
    1.2 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Applications
    Backlighting, Power Management Functions, DC-DC Converters

Technical Documents